Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics
Ultra-wide bandgap p-type α-(Ir,Ga)2O3 films with bandgaps of up to 4.3 eV have been obtained by unintentional doping or Mg doping. For Mg-doped films, Hall-effect measurements revealed a hole concentration of 9.9 × 1018 to 8.1 × 1019 cm−3 and a mobility of 0.13 − 0.92 cm2/V s, respectively. A preli...
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| Veröffentlicht in: | Applied physics letters 2021-03, Vol.118 (10) |
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| container_title | Applied physics letters |
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| creator | Kaneko, Kentaro Masuda, Yasuhisa Kan, Shin-ichi Takahashi, Isao Kato, Yuji Shinohe, Takashi Fujita, Shizuo |
| description | Ultra-wide bandgap p-type α-(Ir,Ga)2O3 films with bandgaps of up to 4.3 eV have been obtained by unintentional doping or Mg doping. For Mg-doped films, Hall-effect measurements revealed a hole concentration of 9.9 × 1018 to 8.1 × 1019 cm−3 and a mobility of 0.13 − 0.92 cm2/V s, respectively. A preliminary test of a pn junction diode composed of p-type α-(Ir,Ga)2O3 and n-type α-Ga2O3 did not show catastrophic breakdown in the reverse direction until 100 V and the current on/off ratio at +3 V/−3V was 5 × 105. Since α-(Ir,Ga)2O3 and α-Ga2O3 take the same crystal structure and are well lattice-matched (with a lattice mismatch of |
| doi_str_mv | 10.1063/5.0027297 |
| format | Article |
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For Mg-doped films, Hall-effect measurements revealed a hole concentration of 9.9 × 1018 to 8.1 × 1019 cm−3 and a mobility of 0.13 − 0.92 cm2/V s, respectively. A preliminary test of a pn junction diode composed of p-type α-(Ir,Ga)2O3 and n-type α-Ga2O3 did not show catastrophic breakdown in the reverse direction until 100 V and the current on/off ratio at +3 V/−3V was 5 × 105. Since α-(Ir,Ga)2O3 and α-Ga2O3 take the same crystal structure and are well lattice-matched (with a lattice mismatch of <0.3%), the formation of a high-quality pn heterojunction is encouraged; this is one of the advantages of the corundum material system.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/5.0027297</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Corundum ; Crystal lattices ; Crystal structure ; Doped films ; Doping ; Energy gap ; Gallium oxides ; Hall effect ; Heterojunctions ; Junction diodes ; Lattice matching ; Magnesium ; P-n junctions</subject><ispartof>Applied physics letters, 2021-03, Vol.118 (10)</ispartof><rights>Author(s)</rights><rights>2021 Author(s). 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For Mg-doped films, Hall-effect measurements revealed a hole concentration of 9.9 × 1018 to 8.1 × 1019 cm−3 and a mobility of 0.13 − 0.92 cm2/V s, respectively. A preliminary test of a pn junction diode composed of p-type α-(Ir,Ga)2O3 and n-type α-Ga2O3 did not show catastrophic breakdown in the reverse direction until 100 V and the current on/off ratio at +3 V/−3V was 5 × 105. Since α-(Ir,Ga)2O3 and α-Ga2O3 take the same crystal structure and are well lattice-matched (with a lattice mismatch of <0.3%), the formation of a high-quality pn heterojunction is encouraged; this is one of the advantages of the corundum material system.</description><subject>Applied physics</subject><subject>Corundum</subject><subject>Crystal lattices</subject><subject>Crystal structure</subject><subject>Doped films</subject><subject>Doping</subject><subject>Energy gap</subject><subject>Gallium oxides</subject><subject>Hall effect</subject><subject>Heterojunctions</subject><subject>Junction diodes</subject><subject>Lattice matching</subject><subject>Magnesium</subject><subject>P-n junctions</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><recordid>eNqd0M1KAzEQB_AgCtbqwTdY8GLF1HztZnuUorVQ6MWePIRpPmTLdrMmWaWP5Yv4TG5pwbunYWZ-zMAfoWtKxpQU_CEfE8Ikm8gTNKBESswpLU_RgBDCcTHJ6Tm6iHHTtznjfIDeVnUKgL8qY7M1NOYd2kz70DWm2-KYQqdTF6zJWpx2rc1-vvHtPNzPYMSWPIO69ruYOR_2ixnsZ7a2OgXfVDpeojMHdbRXxzpEq-en1-kLXixn8-njAmuWy4QFl85SwUoiXAFguGCCsJJpWMPa0VxLLTQHQ6QuC1MUTlNHGS1F6cBxA3yIbg532-A_OhuT2vguNP1LxXJCKGO5YL0aHZQOPsZgnWpDtYWwU5SofXYqV8fsent3sFFXCVLlm__hTx_-oGqN479oqn0T</recordid><startdate>20210308</startdate><enddate>20210308</enddate><creator>Kaneko, Kentaro</creator><creator>Masuda, Yasuhisa</creator><creator>Kan, Shin-ichi</creator><creator>Takahashi, Isao</creator><creator>Kato, Yuji</creator><creator>Shinohe, Takashi</creator><creator>Fujita, Shizuo</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0001-6384-6693</orcidid></search><sort><creationdate>20210308</creationdate><title>Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics</title><author>Kaneko, Kentaro ; Masuda, Yasuhisa ; Kan, Shin-ichi ; Takahashi, Isao ; Kato, Yuji ; Shinohe, Takashi ; Fujita, Shizuo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c257t-437fe142804f6aad34240282cababf15c7c4c3ad07c86d66fc1f121848faf3da3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Applied physics</topic><topic>Corundum</topic><topic>Crystal lattices</topic><topic>Crystal structure</topic><topic>Doped films</topic><topic>Doping</topic><topic>Energy gap</topic><topic>Gallium oxides</topic><topic>Hall effect</topic><topic>Heterojunctions</topic><topic>Junction diodes</topic><topic>Lattice matching</topic><topic>Magnesium</topic><topic>P-n junctions</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kaneko, Kentaro</creatorcontrib><creatorcontrib>Masuda, Yasuhisa</creatorcontrib><creatorcontrib>Kan, Shin-ichi</creatorcontrib><creatorcontrib>Takahashi, Isao</creatorcontrib><creatorcontrib>Kato, Yuji</creatorcontrib><creatorcontrib>Shinohe, Takashi</creatorcontrib><creatorcontrib>Fujita, Shizuo</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kaneko, Kentaro</au><au>Masuda, Yasuhisa</au><au>Kan, Shin-ichi</au><au>Takahashi, Isao</au><au>Kato, Yuji</au><au>Shinohe, Takashi</au><au>Fujita, Shizuo</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics</atitle><jtitle>Applied physics letters</jtitle><date>2021-03-08</date><risdate>2021</risdate><volume>118</volume><issue>10</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Ultra-wide bandgap p-type α-(Ir,Ga)2O3 films with bandgaps of up to 4.3 eV have been obtained by unintentional doping or Mg doping. For Mg-doped films, Hall-effect measurements revealed a hole concentration of 9.9 × 1018 to 8.1 × 1019 cm−3 and a mobility of 0.13 − 0.92 cm2/V s, respectively. A preliminary test of a pn junction diode composed of p-type α-(Ir,Ga)2O3 and n-type α-Ga2O3 did not show catastrophic breakdown in the reverse direction until 100 V and the current on/off ratio at +3 V/−3V was 5 × 105. Since α-(Ir,Ga)2O3 and α-Ga2O3 take the same crystal structure and are well lattice-matched (with a lattice mismatch of <0.3%), the formation of a high-quality pn heterojunction is encouraged; this is one of the advantages of the corundum material system.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0027297</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0001-6384-6693</orcidid></addata></record> |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Applied physics Corundum Crystal lattices Crystal structure Doped films Doping Energy gap Gallium oxides Hall effect Heterojunctions Junction diodes Lattice matching Magnesium P-n junctions |
| title | Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics |
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