Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics

Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)2O3 alloys for α-Ga2O3 electronics

Ultra-wide bandgap p-type α-(Ir,Ga)2O3 films with bandgaps of up to 4.3 eV have been obtained by unintentional doping or Mg doping. For Mg-doped films, Hall-effect measurements revealed a hole concentration of 9.9 × 1018 to 8.1 × 1019 cm−3 and a mobility of 0.13 − 0.92 cm2/V s, respectively. A preli...

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Veröffentlicht in:Applied physics letters 2021-03, Vol.118 (10)
Hauptverfasser: Kaneko, Kentaro, Masuda, Yasuhisa, Kan, Shin-ichi, Takahashi, Isao, Kato, Yuji, Shinohe, Takashi, Fujita, Shizuo
Format: Artikel
Sprache:eng
Schlagworte:
Applied physics
Corundum
Crystal lattices
Crystal structure
Doped films
Doping
Energy gap
Gallium oxides
Hall effect
Heterojunctions
Junction diodes
Lattice matching
Magnesium
P-n junctions
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Zusammenfassung:Ultra-wide bandgap p-type α-(Ir,Ga)2O3 films with bandgaps of up to 4.3 eV have been obtained by unintentional doping or Mg doping. For Mg-doped films, Hall-effect measurements revealed a hole concentration of 9.9 × 1018 to 8.1 × 1019 cm−3 and a mobility of 0.13 − 0.92 cm2/V s, respectively. A preliminary test of a pn junction diode composed of p-type α-(Ir,Ga)2O3 and n-type α-Ga2O3 did not show catastrophic breakdown in the reverse direction until 100 V and the current on/off ratio at +3 V/−3V was 5 × 105. Since α-(Ir,Ga)2O3 and α-Ga2O3 take the same crystal structure and are well lattice-matched (with a lattice mismatch of
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0027297