In situ time-domain thermoreflectance measurements using Au as the transducer during electrolyte gating

Understanding the relationships between the thermal conductivity and carrier density in thin films is of great importance for the thermal management of flexible thin film electronics. Here, we report a robust measurement technique to tune the carrier density in thin films and to evaluate their cross...

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Veröffentlicht in:Applied physics letters 2020-09, Vol.117 (13)
Hauptverfasser: Ueji, Kan, Matsuoka, Yuya, Yagi, Takashi, Yomogida, Yohei, Ichinose, Yota, Yoshida, Akari, Yanagi, Kazuhiro
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Sprache:eng
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Zusammenfassung:Understanding the relationships between the thermal conductivity and carrier density in thin films is of great importance for the thermal management of flexible thin film electronics. Here, we report a robust measurement technique to tune the carrier density in thin films and to evaluate their cross-plane thermal conductivities simultaneously. We employed the time-domain thermoreflectance method using an Au transducer and evaluated the thin film thermal conductivity in situ using electrolyte gating with an ionic gel. The robust measurement technique proposed in this study elucidated the relationships among the above-mentioned parameters in semiconducting single-walled carbon nanotubes.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0023524