Electrical compensation and cation vacancies in Al rich Si-doped AlGaN

We report positron annihilation results on vacancy defects in Si-doped Al0.90Ga0.10N alloys grown by metalorganic vapor phase epitaxy. By combining room temperature and temperature-dependent Doppler broadening measurements, we identify negatively charged in-grown cation vacancies in the concentratio...

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Veröffentlicht in:Applied physics letters 2020-10, Vol.117 (14)
Hauptverfasser: Prozheev, I., Mehnke, F., Wernicke, T., Kneissl, M., Tuomisto, F.
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Sprache:eng
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Zusammenfassung:We report positron annihilation results on vacancy defects in Si-doped Al0.90Ga0.10N alloys grown by metalorganic vapor phase epitaxy. By combining room temperature and temperature-dependent Doppler broadening measurements, we identify negatively charged in-grown cation vacancies in the concentration range from below 1 × 10 16 cm−3 to 2 × 10 18 cm−3 in samples with a high C content, strongly correlated with the Si doping level in the samples ranging from 1 × 10 17 cm−3 to 7 × 10 18 cm−3. On the other hand, we find predominantly neutral cation vacancies with concentrations above 5 × 10 18 cm−3 in samples with a low C content. The cation vacancies are important as compensating centers only in material with a high C content at high Si doping levels.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0016494