Electrical compensation and cation vacancies in Al rich Si-doped AlGaN
We report positron annihilation results on vacancy defects in Si-doped Al0.90Ga0.10N alloys grown by metalorganic vapor phase epitaxy. By combining room temperature and temperature-dependent Doppler broadening measurements, we identify negatively charged in-grown cation vacancies in the concentratio...
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Veröffentlicht in: | Applied physics letters 2020-10, Vol.117 (14) |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We report positron annihilation results on vacancy defects in Si-doped Al0.90Ga0.10N alloys grown by metalorganic vapor phase epitaxy. By combining room temperature and temperature-dependent Doppler broadening measurements, we identify negatively charged in-grown cation vacancies in the concentration range from below
1
×
10
16 cm−3 to
2
×
10
18 cm−3 in samples with a high C content, strongly correlated with the Si doping level in the samples ranging from
1
×
10
17 cm−3 to
7
×
10
18 cm−3. On the other hand, we find predominantly neutral cation vacancies with concentrations above
5
×
10
18 cm−3 in samples with a low C content. The cation vacancies are important as compensating centers only in material with a high C content at high Si doping levels. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/5.0016494 |