Influence of Si film thickness on growth enhancement in Si lateral solid phase epitaxy

Influence of Si film thickness on growth enhancement in Si lateral solid phase epitaxy

Lateral solid phase epitaxial growth (L-SPE) of Si on SiO2 film was investigated as a function of deposited amorphous Si (a-Si) film thickness. Both the L-SPE rate and the annealing time necessary for {111} facet formation increased with film thickness. As a result, a large L-SPE length (9 μm) under...

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Veröffentlicht in:Applied physics letters 1988-05, Vol.52 (21), p.1788-1790
Hauptverfasser: MONIWA, M, KUSUKAWA, K, MURAKAMI, E, WARABISAKO, T, MIYAO, M
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Sprache:eng
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Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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container_end_page 1790
container_issue 21
container_start_page 1788
container_title Applied physics letters
container_volume 52
creator MONIWA, M
KUSUKAWA, K
MURAKAMI, E
WARABISAKO, T
MIYAO, M
description Lateral solid phase epitaxial growth (L-SPE) of Si on SiO2 film was investigated as a function of deposited amorphous Si (a-Si) film thickness. Both the L-SPE rate and the annealing time necessary for {111} facet formation increased with film thickness. As a result, a large L-SPE length (9 μm) under {110} facet growth was obtained for a 1.6-μm-thick film sample. Above the critical film thickness (>2 μm), crack formation in a-Si films was observed during deposition. This indicates that intrinsic stresses play an important role in this growth enhancement.
doi_str_mv 10.1063/1.99626
format Article
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subjects Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
title Influence of Si film thickness on growth enhancement in Si lateral solid phase epitaxy
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