Influence of Si film thickness on growth enhancement in Si lateral solid phase epitaxy

Lateral solid phase epitaxial growth (L-SPE) of Si on SiO2 film was investigated as a function of deposited amorphous Si (a-Si) film thickness. Both the L-SPE rate and the annealing time necessary for {111} facet formation increased with film thickness. As a result, a large L-SPE length (9 μm) under...

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Veröffentlicht in:	Applied physics letters 1988-05, Vol.52 (21), p.1788-1790
Hauptverfasser:	MONIWA, M, KUSUKAWA, K, MURAKAMI, E, WARABISAKO, T, MIYAO, M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Zusammenfassung:	Lateral solid phase epitaxial growth (L-SPE) of Si on SiO2 film was investigated as a function of deposited amorphous Si (a-Si) film thickness. Both the L-SPE rate and the annealing time necessary for {111} facet formation increased with film thickness. As a result, a large L-SPE length (9 μm) under {110} facet growth was obtained for a 1.6-μm-thick film sample. Above the critical film thickness (>2 μm), crack formation in a-Si films was observed during deposition. This indicates that intrinsic stresses play an important role in this growth enhancement.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.99626