Reduction of interface hydrogen content by partially ionized beam deposition technique
Hydrogen content at the Al/Si interface of samples with Al films deposited by conventional means and by a partially ionized beam (PIB) was measured using 1H(15N,αγ)12C nuclear resonance reaction. We observed that samples with PIB-deposited Al film exhibited significantly lower hydrogen concentration...
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| Veröffentlicht in: | Applied physics letters 1988-06, Vol.52 (23), p.1962-1964 |
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| container_end_page | 1964 |
|---|---|
| container_issue | 23 |
| container_start_page | 1962 |
| container_title | Applied physics letters |
| container_volume | 52 |
| creator | YAPSIR, A. S LU, T.-M LANFORD, W. A |
| description | Hydrogen content at the Al/Si interface of samples with Al films deposited by conventional means and by a partially ionized beam (PIB) was measured using 1H(15N,αγ)12C nuclear resonance reaction. We observed that samples with PIB-deposited Al film exhibited significantly lower hydrogen concentration at the Al/Si in interface than that of the sample deposited by conventional means. The results demonstrated the ability of the PIB technique to perform interface self-cleaning, at least for hydrogen contaminant. |
| doi_str_mv | 10.1063/1.99590 |
| format | Article |
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Standards</topic><topic>Applied sciences</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Measurement of properties and materials state</topic><topic>Metals, semimetals and alloys</topic><topic>Metals. Metallurgy</topic><topic>Nondestructive testing</topic><topic>Physical properties of thin films, nonelectronic</topic><topic>Physics</topic><topic>Specific materials</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>YAPSIR, A. S</creatorcontrib><creatorcontrib>LU, T.-M</creatorcontrib><creatorcontrib>LANFORD, W. A</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>YAPSIR, A. S</au><au>LU, T.-M</au><au>LANFORD, W. A</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reduction of interface hydrogen content by partially ionized beam deposition technique</atitle><jtitle>Applied physics letters</jtitle><date>1988-06-06</date><risdate>1988</risdate><volume>52</volume><issue>23</issue><spage>1962</spage><epage>1964</epage><pages>1962-1964</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Hydrogen content at the Al/Si interface of samples with Al films deposited by conventional means and by a partially ionized beam (PIB) was measured using 1H(15N,αγ)12C nuclear resonance reaction. We observed that samples with PIB-deposited Al film exhibited significantly lower hydrogen concentration at the Al/Si in interface than that of the sample deposited by conventional means. The results demonstrated the ability of the PIB technique to perform interface self-cleaning, at least for hydrogen contaminant.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.99590</doi><tpages>3</tpages></addata></record> |
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| ispartof | Applied physics letters, 1988-06, Vol.52 (23), p.1962-1964 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_99590 |
| source | AIP Digital Archive |
| subjects | Analysing. Testing. Standards Applied sciences Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Measurement of properties and materials state Metals, semimetals and alloys Metals. Metallurgy Nondestructive testing Physical properties of thin films, nonelectronic Physics Specific materials Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) |
| title | Reduction of interface hydrogen content by partially ionized beam deposition technique |
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