Reduction of interface hydrogen content by partially ionized beam deposition technique

Hydrogen content at the Al/Si interface of samples with Al films deposited by conventional means and by a partially ionized beam (PIB) was measured using 1H(15N,αγ)12C nuclear resonance reaction. We observed that samples with PIB-deposited Al film exhibited significantly lower hydrogen concentration...

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Veröffentlicht in:	Applied physics letters 1988-06, Vol.52 (23), p.1962-1964
Hauptverfasser:	YAPSIR, A. S, LU, T.-M, LANFORD, W. A
Format:	Artikel
Sprache:	eng
Schlagworte:	Analysing. Testing. Standards Applied sciences Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Measurement of properties and materials state Metals, semimetals and alloys Metals. Metallurgy Nondestructive testing Physical properties of thin films, nonelectronic Physics Specific materials Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Beschreibung
Zusammenfassung:	Hydrogen content at the Al/Si interface of samples with Al films deposited by conventional means and by a partially ionized beam (PIB) was measured using 1H(15N,αγ)12C nuclear resonance reaction. We observed that samples with PIB-deposited Al film exhibited significantly lower hydrogen concentration at the Al/Si in interface than that of the sample deposited by conventional means. The results demonstrated the ability of the PIB technique to perform interface self-cleaning, at least for hydrogen contaminant.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.99590