Explosive crystallization in amorphous Si initiated by long pulse width laser irradiation

Explosive crystallization of amorphous Si is studied in a new heat-flow regime using long pulse (45 ns full width at half-maximum) ruby laser irradiation. In this regime, previously unobserved phenomena are found. Nucleation of crystalline Si is observed while the amorphous phase is melting at high...

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1988-01, Vol.52 (3), p.203-205
Hauptverfasser:	PEERCY, P. S, TSAO, J. Y, STIFFLER, S. R, THOMPSON, M. O
Format:	Artikel
Sprache:	eng
Schlagworte:	360602 - Other Materials- Structure & Phase Studies 360605 - Materials- Radiation Effects Condensed matter: structure, mechanical and thermal properties CRYSTALLIZATION ELECTROMAGNETIC RADIATION ELEMENTS Exact sciences and technology LASER RADIATION MATERIALS SCIENCE NUCLEATION PHASE TRANSFORMATIONS PHYSICAL RADIATION EFFECTS Physics RADIATION EFFECTS RADIATIONS SEMIMETALS SILICON Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Zusammenfassung:	Explosive crystallization of amorphous Si is studied in a new heat-flow regime using long pulse (45 ns full width at half-maximum) ruby laser irradiation. In this regime, previously unobserved phenomena are found. Nucleation of crystalline Si is observed while the amorphous phase is melting at high (m/s) velocity and epitaxy from the underlying crystalline substrate is observed even under conditions for which the amorphous Si is never at any instant fully melted. These measurements, combined with previous measurements using short pulse irradiation, lead to development of a more complete model of explosive crystallization.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.99519