Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy

Low-threshold GaAs/AlGaAs lasers grown on Si by organometallic vapor phase epitaxy

Low-threshold double-heterostructure ridge-waveguide lasers have been fabricated in GaAs/AlGaAs layers grown on Si by organometallic vapor phase epitaxy. The pulsed threshold current of the best ridge-waveguide laser is 50 mA, with differential quantum efficiency of about 9% per facet. Broad-area la...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1988-04, Vol.52 (14), p.1114-1115
Hauptverfasser: CHOI, H. K, LEE, J. W, SALERNO, J. P, CONNORS, M. K, TSAUR, B.-Y, FAN, J. C. C
Format: Artikel
Sprache:eng
Schlagworte:
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COATINGS
CURRENTS
DATA
EFFICIENCY
ELECTRIC CURRENTS
ELEMENTS
ENERGY
ENGINEERING
EPITAXY
Exact sciences and technology
EXPERIMENTAL DATA
FABRICATION
Fundamental areas of phenomenology (including applications)
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INFORMATION
LASERS
NUMERICAL DATA
Optics
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
Physics
PNICTIDES
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
SEMIMETALS 420300 > Engineering-- Lasers-- (-1989)
SILICON
THRESHOLD CURRENT
THRESHOLD ENERGY
VAPOR DEPOSITED COATINGS
VAPOR PHASE EPITAXY
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Zusammenfassung:Low-threshold double-heterostructure ridge-waveguide lasers have been fabricated in GaAs/AlGaAs layers grown on Si by organometallic vapor phase epitaxy. The pulsed threshold current of the best ridge-waveguide laser is 50 mA, with differential quantum efficiency of about 9% per facet. Broad-area lasers fabricated on the same wafer have pulsed threshold current densities as low as 300 A/cm2 .
ISSN:0003-6951
1077-3118
DOI:10.1063/1.99178