Time-of-flight study on the thermal etching of Al with Cl2
A pseudorandom cross-correlation technique has been used to study the thermal etching of aluminum with molecular chlorine. Time-of-flight (TOF) distributions of particles desorbing from the substrate are measured by modulating the ejected product beam. Modulation is achieved by a rotating chopping d...
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Veröffentlicht in: | Applied physics letters 1988-01, Vol.52 (2), p.98-100 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | A pseudorandom cross-correlation technique has been used to study the thermal etching of aluminum with molecular chlorine. Time-of-flight (TOF) distributions of particles desorbing from the substrate are measured by modulating the ejected product beam. Modulation is achieved by a rotating chopping disk with slots in a pseudorandom sequence on its periphery. TOF distributions and temperature-dependent reaction product yields are measured for the products desorbing from the chlorinated aluminum substrate in the temperature range from 300 to 900 K. A reaction mechanism will be discussed in some detail. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.99046 |