Time-of-flight study on the thermal etching of Al with Cl2

A pseudorandom cross-correlation technique has been used to study the thermal etching of aluminum with molecular chlorine. Time-of-flight (TOF) distributions of particles desorbing from the substrate are measured by modulating the ejected product beam. Modulation is achieved by a rotating chopping d...

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Veröffentlicht in:Applied physics letters 1988-01, Vol.52 (2), p.98-100
Hauptverfasser: JANSSEN, R. J. A. A, KOLFSCHOTEN, A. W, VAN VEEN, G. N. A
Format: Artikel
Sprache:eng
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Zusammenfassung:A pseudorandom cross-correlation technique has been used to study the thermal etching of aluminum with molecular chlorine. Time-of-flight (TOF) distributions of particles desorbing from the substrate are measured by modulating the ejected product beam. Modulation is achieved by a rotating chopping disk with slots in a pseudorandom sequence on its periphery. TOF distributions and temperature-dependent reaction product yields are measured for the products desorbing from the chlorinated aluminum substrate in the temperature range from 300 to 900 K. A reaction mechanism will be discussed in some detail.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.99046