Low-temperature electron transport in a one-side modulation-doped Al0.33Ga0.67As/GaAs/Al0.33Ga0.67As single quantum well structure

Low-temperature electron transport in a one-side modulation-doped Al0.33Ga0.67As/GaAs/Al0.33Ga0.67As single quantum well structure

The contributions of the remote ionized impurity scattering, alloy disorder scattering, and scattering due to band-edge discontinuity fluctuation to the low-temperature electron mobility in one-side modulation-doped Al0.33 Ga0.67 As/GaAs/Al0.33Ga0.67As single square quantum well structures are theor...

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Veröffentlicht in:Applied physics letters 1987-09, Vol.51 (13), p.1016-1018
Hauptverfasser: Cho, N. M., Ogale, S. B., Madhukar, A.
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container_title Applied physics letters
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creator Cho, N. M.
Ogale, S. B.
Madhukar, A.
description The contributions of the remote ionized impurity scattering, alloy disorder scattering, and scattering due to band-edge discontinuity fluctuation to the low-temperature electron mobility in one-side modulation-doped Al0.33 Ga0.67 As/GaAs/Al0.33Ga0.67As single square quantum well structures are theoretically investigated via the memory function approach. The carrier wave functions and potential distributions used are obtained self-consistently. Dependence of mobility on quantum well width and spacer layer thickness shows that mobilities of the order of 106 cm2 /V s can be achieved in such structures.
doi_str_mv 10.1063/1.98816
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title Low-temperature electron transport in a one-side modulation-doped Al0.33Ga0.67As/GaAs/Al0.33Ga0.67As single quantum well structure
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