Low-temperature electron transport in a one-side modulation-doped Al0.33Ga0.67As/GaAs/Al0.33Ga0.67As single quantum well structure

The contributions of the remote ionized impurity scattering, alloy disorder scattering, and scattering due to band-edge discontinuity fluctuation to the low-temperature electron mobility in one-side modulation-doped Al0.33 Ga0.67 As/GaAs/Al0.33Ga0.67As single square quantum well structures are theoretically investigated via the memory function approach. The carrier wave functions and potential distributions used are obtained self-consistently. Dependence of mobility on quantum well width and spacer layer thickness shows that mobilities of the order of 106 cm2 /V s can be achieved in such structures.