Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH4-NH3-NF3 mixtures

Fluorinated silicon nitride films are deposited by the plasma enhanced reaction of SiH4-NH3-NF3 gas mixtures. The deposition rate with NF3 increases to a maximum of approximately six times that of SiNxHy deposited using only SiH4 and NH3. Optical and electrical properties of the SiNxHy films are also affected. The addition of NF3 to the deposition atmosphere significantly reduces the concentration of H bonded to Si. The films display dielectric properties similar to SiNxHy films deposited using SiH4 and NH3. All films containing F hydrolyze on exposure to air. When less than 10 at. % F is present in the as-deposited films, film stability is achieved after initial hydrolysis. Essentially total hydrolysis to SiO2 occurs when the F content exceeds 10 at. %.