Surface emitting laser diode with bent waveguide

Surface emitting laser diode with bent waveguide

A surface emitting laser diode (SELD) with a bent double heterostructure is fabricated on a grooved substrate. This SELD has a facet angle of 20 ° and lased at a threshold current of 120 mA. The external quantum efficiency is 33%. The far-field pattern has sharp peaks at 10 ° and 18 ° and wider emis...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1987-03, Vol.50 (12), p.705-707
Hauptverfasser: OGURA, M, WU, M, HSIN, W, WHINNERY, J. R, WANG, S
Format: Artikel
Sprache:eng
Schlagworte:
BENDING
DATA
EFFICIENCY
ENGINEERING
Exact sciences and technology
EXPERIMENTAL DATA
Fundamental areas of phenomenology (including applications)
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
Optics
Physics
QUANTUM EFFICIENCY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS 420300 > Engineering-- Lasers-- (-1989)
SEMICONDUCTOR LASERS
Semiconductor lasers
laser diodes
WAVEGUIDES
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Beschreibung
Zusammenfassung:A surface emitting laser diode (SELD) with a bent double heterostructure is fabricated on a grooved substrate. This SELD has a facet angle of 20 ° and lased at a threshold current of 120 mA. The external quantum efficiency is 33%. The far-field pattern has sharp peaks at 10 ° and 18 ° and wider emission bands between 25 ° and 45 °. Radiation loss by the bent waveguide is also estimated by the equivalent current source model.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.98073