Effective elastic constants of thin-film tungsten-silicide from surface acoustic wave analysis
The dispersion of surface acoustic waves propagating on single-crystal (100) silicon substrates covered by thin films of tungsten-silicide has been investigated using an acoustic material signature technique at a frequency of 339 MHz. The tungsten-silicide layers (500–2500 Å) were deposited using a...
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Veröffentlicht in: | Applied physics letters 1987-01, Vol.50 (2), p.74-76 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The dispersion of surface acoustic waves propagating on single-crystal (100) silicon substrates covered by thin films of tungsten-silicide has been investigated using an acoustic material signature technique at a frequency of 339 MHz. The tungsten-silicide layers (500–2500 Å) were deposited using a co-sputtering technique, isochronally annealed at temperatures of 700 and 850 °C for 45 min in an argon atmosphere and examined using Rutherford backscattering spectrometry. Dispersion curves were calculated using a Tiersten model [J. Appl. Phys. 40, 2 (1969)] and fitted to the experimental dispersion data. The effective elastic constants for annealed and ‘‘as-deposited’’ layers were determined as best-fit parameters. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.97823 |