Defect reduction in GaAs grown by molecular beam epitaxy using different superlattice structures

Several superlattice structures, grown by molecular beam epitaxy, have been used to reduce the density of threading dislocations originating from the GaAs substrate. Results clearly indicate that compared to epitaxial layers grown directly on GaAs substrates, a GaAs-InxGa1−xAs superlattice (x

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Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1986-10, Vol.49 (15), p.942-944
Hauptverfasser:	BEDAIR, S. M, HUMPHREYS, T. P, EL-MASRY, N. A, LO, Y, HAMAGUCHI, N, LAMP, C. D, TUTTLE, A. A, DREIFUS, D. L, RUSSELL, P
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	Several superlattice structures, grown by molecular beam epitaxy, have been used to reduce the density of threading dislocations originating from the GaAs substrate. Results clearly indicate that compared to epitaxial layers grown directly on GaAs substrates, a GaAs-InxGa1−xAs superlattice (x
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.97631