Composition dependence of Au/In x Al1− x As Schottky barrier heights

The surface barrier heights φbn and room-temperature band gaps Eg of Si-doped InxAl1−xAs layers grown by molecular beam epitaxy on n-type (100) oriented InP substrates have been determined as a function of composition with capacitance versus voltage, internal photoemission, photoluminescence, and do...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1986-12, Vol.49 (23), p.1593-1595
Hauptverfasser:	Lin, C. L., Chu, P., Kellner, A. L., Wieder, H. H., Rezek, Edward A.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The surface barrier heights φbn and room-temperature band gaps Eg of Si-doped InxAl1−xAs layers grown by molecular beam epitaxy on n-type (100) oriented InP substrates have been determined as a function of composition with capacitance versus voltage, internal photoemission, photoluminescence, and double-crystal x-ray rocking curve measurements for 0.45
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.97290