New method for separating and characterizing interface states and oxide traps on oxidized silicon
The generation-annealing kinetics of interface and oxide traps are separated using a new time-dependent high-frequency capacitance-voltage technique based on the independence of the trapped oxide charge density on the silicon surface energy band bending or surface potential. An application example o...
Gespeichert in:
| Veröffentlicht in: | Appl. Phys. Lett.; (United States) 1986-03, Vol.48 (12), p.782-784 |
|---|---|
| Hauptverfasser: | , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 784 |
|---|---|
| container_issue | 12 |
| container_start_page | 782 |
| container_title | Appl. Phys. Lett.; (United States) |
| container_volume | 48 |
| creator | Sah, Chih-Tang Lin, Wallace Wan-Li Pan, Samuel Cheng-Sheng Hsu, Charles Ching-Hsiang |
| description | The generation-annealing kinetics of interface and oxide traps are separated using a new time-dependent high-frequency capacitance-voltage technique based on the independence of the trapped oxide charge density on the silicon surface energy band bending or surface potential. An application example of this new technique is described which gives the post-irradiation room-temperature annealing rates and annealed densities of the two oxide and two interface traps generated by an 8-keV electron beam. |
| doi_str_mv | 10.1063/1.96720 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_osti_</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_96720</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>7916165</sourcerecordid><originalsourceid>FETCH-LOGICAL-c279t-714cc900b6d98f8ef5ea5852e82ff26bc2e04f1a74e26474eb2003ba8b1857143</originalsourceid><addsrcrecordid>eNo9kE1PwzAMhiMEEmMg_kKEkDh1xGmbpkc08SVNcIFz5aYOC9raKokE7NeTrYiL7dd6bMsvY5cgFiBUfguLWlVSHLEZiKrKcgB9zGZCiDxTdQmn7CyEzyRLmeczhi_0xbcU10PH7eB5oBE9Rtd_cOw7btZJmUje7fYt16fSoiEeIkYKB2b4dh3x6HEMfOgP0u2o48FtnBn6c3ZicRPo4i_P2fvD_dvyKVu9Pj4v71aZkVUdswoKY2ohWtXV2mqyJWGpS0laWitVaySJwgJWBUlVpNjK9FKLugVdpuF8zq6mvUOIrgnGRTLrdL8nExsFoGoNCbqZIOOHEDzZZvRui_6nAdHs7WugOdiXyOuJHDEY3FiPvXHhH69qUKDK_BfgW27d</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>New method for separating and characterizing interface states and oxide traps on oxidized silicon</title><source>AIP Digital Archive</source><creator>Sah, Chih-Tang ; Lin, Wallace Wan-Li ; Pan, Samuel Cheng-Sheng ; Hsu, Charles Ching-Hsiang</creator><creatorcontrib>Sah, Chih-Tang ; Lin, Wallace Wan-Li ; Pan, Samuel Cheng-Sheng ; Hsu, Charles Ching-Hsiang ; Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</creatorcontrib><description>The generation-annealing kinetics of interface and oxide traps are separated using a new time-dependent high-frequency capacitance-voltage technique based on the independence of the trapped oxide charge density on the silicon surface energy band bending or surface potential. An application example of this new technique is described which gives the post-irradiation room-temperature annealing rates and annealed densities of the two oxide and two interface traps generated by an 8-keV electron beam.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.96720</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>360605 - Materials- Radiation Effects ; ANNEALING ; Applied sciences ; BEAMS ; CHALCOGENIDES ; CHEMICAL REACTIONS ; COLLISIONS ; ELECTRIC CONDUCTIVITY ; ELECTRICAL PROPERTIES ; ELECTRON BEAMS ; ELECTRON COLLISIONS ; ELECTRONIC STRUCTURE ; Electronics ; ELEMENTS ; ENERGY ; ENERGY RANGE ; Exact sciences and technology ; FREE ENERGY ; HEAT TREATMENTS ; INTERFACES ; KEV RANGE ; KEV RANGE 01-10 ; KINETICS ; LEPTON BEAMS ; MATERIALS SCIENCE ; MINERALS ; OXIDATION ; OXIDE MINERALS ; OXIDES ; OXYGEN COMPOUNDS ; PARTICLE BEAMS ; PHYSICAL PROPERTIES ; PHYSICAL RADIATION EFFECTS ; RADIATION EFFECTS ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SEMIMETALS ; SILICA ; SILICON ; SILICON COMPOUNDS ; SILICON OXIDES ; SURFACE ENERGY ; SURFACE PROPERTIES ; THERMODYNAMIC PROPERTIES ; TRAPS</subject><ispartof>Appl. Phys. Lett.; (United States), 1986-03, Vol.48 (12), p.782-784</ispartof><rights>1987 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c279t-714cc900b6d98f8ef5ea5852e82ff26bc2e04f1a74e26474eb2003ba8b1857143</citedby><cites>FETCH-LOGICAL-c279t-714cc900b6d98f8ef5ea5852e82ff26bc2e04f1a74e26474eb2003ba8b1857143</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,881,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=7916165$$DView record in Pascal Francis$$Hfree_for_read</backlink><backlink>$$Uhttps://www.osti.gov/biblio/6116981$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Sah, Chih-Tang</creatorcontrib><creatorcontrib>Lin, Wallace Wan-Li</creatorcontrib><creatorcontrib>Pan, Samuel Cheng-Sheng</creatorcontrib><creatorcontrib>Hsu, Charles Ching-Hsiang</creatorcontrib><creatorcontrib>Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</creatorcontrib><title>New method for separating and characterizing interface states and oxide traps on oxidized silicon</title><title>Appl. Phys. Lett.; (United States)</title><description>The generation-annealing kinetics of interface and oxide traps are separated using a new time-dependent high-frequency capacitance-voltage technique based on the independence of the trapped oxide charge density on the silicon surface energy band bending or surface potential. An application example of this new technique is described which gives the post-irradiation room-temperature annealing rates and annealed densities of the two oxide and two interface traps generated by an 8-keV electron beam.</description><subject>360605 - Materials- Radiation Effects</subject><subject>ANNEALING</subject><subject>Applied sciences</subject><subject>BEAMS</subject><subject>CHALCOGENIDES</subject><subject>CHEMICAL REACTIONS</subject><subject>COLLISIONS</subject><subject>ELECTRIC CONDUCTIVITY</subject><subject>ELECTRICAL PROPERTIES</subject><subject>ELECTRON BEAMS</subject><subject>ELECTRON COLLISIONS</subject><subject>ELECTRONIC STRUCTURE</subject><subject>Electronics</subject><subject>ELEMENTS</subject><subject>ENERGY</subject><subject>ENERGY RANGE</subject><subject>Exact sciences and technology</subject><subject>FREE ENERGY</subject><subject>HEAT TREATMENTS</subject><subject>INTERFACES</subject><subject>KEV RANGE</subject><subject>KEV RANGE 01-10</subject><subject>KINETICS</subject><subject>LEPTON BEAMS</subject><subject>MATERIALS SCIENCE</subject><subject>MINERALS</subject><subject>OXIDATION</subject><subject>OXIDE MINERALS</subject><subject>OXIDES</subject><subject>OXYGEN COMPOUNDS</subject><subject>PARTICLE BEAMS</subject><subject>PHYSICAL PROPERTIES</subject><subject>PHYSICAL RADIATION EFFECTS</subject><subject>RADIATION EFFECTS</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SEMIMETALS</subject><subject>SILICA</subject><subject>SILICON</subject><subject>SILICON COMPOUNDS</subject><subject>SILICON OXIDES</subject><subject>SURFACE ENERGY</subject><subject>SURFACE PROPERTIES</subject><subject>THERMODYNAMIC PROPERTIES</subject><subject>TRAPS</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1986</creationdate><recordtype>article</recordtype><recordid>eNo9kE1PwzAMhiMEEmMg_kKEkDh1xGmbpkc08SVNcIFz5aYOC9raKokE7NeTrYiL7dd6bMsvY5cgFiBUfguLWlVSHLEZiKrKcgB9zGZCiDxTdQmn7CyEzyRLmeczhi_0xbcU10PH7eB5oBE9Rtd_cOw7btZJmUje7fYt16fSoiEeIkYKB2b4dh3x6HEMfOgP0u2o48FtnBn6c3ZicRPo4i_P2fvD_dvyKVu9Pj4v71aZkVUdswoKY2ohWtXV2mqyJWGpS0laWitVaySJwgJWBUlVpNjK9FKLugVdpuF8zq6mvUOIrgnGRTLrdL8nExsFoGoNCbqZIOOHEDzZZvRui_6nAdHs7WugOdiXyOuJHDEY3FiPvXHhH69qUKDK_BfgW27d</recordid><startdate>19860324</startdate><enddate>19860324</enddate><creator>Sah, Chih-Tang</creator><creator>Lin, Wallace Wan-Li</creator><creator>Pan, Samuel Cheng-Sheng</creator><creator>Hsu, Charles Ching-Hsiang</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>OTOTI</scope></search><sort><creationdate>19860324</creationdate><title>New method for separating and characterizing interface states and oxide traps on oxidized silicon</title><author>Sah, Chih-Tang ; Lin, Wallace Wan-Li ; Pan, Samuel Cheng-Sheng ; Hsu, Charles Ching-Hsiang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c279t-714cc900b6d98f8ef5ea5852e82ff26bc2e04f1a74e26474eb2003ba8b1857143</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1986</creationdate><topic>360605 - Materials- Radiation Effects</topic><topic>ANNEALING</topic><topic>Applied sciences</topic><topic>BEAMS</topic><topic>CHALCOGENIDES</topic><topic>CHEMICAL REACTIONS</topic><topic>COLLISIONS</topic><topic>ELECTRIC CONDUCTIVITY</topic><topic>ELECTRICAL PROPERTIES</topic><topic>ELECTRON BEAMS</topic><topic>ELECTRON COLLISIONS</topic><topic>ELECTRONIC STRUCTURE</topic><topic>Electronics</topic><topic>ELEMENTS</topic><topic>ENERGY</topic><topic>ENERGY RANGE</topic><topic>Exact sciences and technology</topic><topic>FREE ENERGY</topic><topic>HEAT TREATMENTS</topic><topic>INTERFACES</topic><topic>KEV RANGE</topic><topic>KEV RANGE 01-10</topic><topic>KINETICS</topic><topic>LEPTON BEAMS</topic><topic>MATERIALS SCIENCE</topic><topic>MINERALS</topic><topic>OXIDATION</topic><topic>OXIDE MINERALS</topic><topic>OXIDES</topic><topic>OXYGEN COMPOUNDS</topic><topic>PARTICLE BEAMS</topic><topic>PHYSICAL PROPERTIES</topic><topic>PHYSICAL RADIATION EFFECTS</topic><topic>RADIATION EFFECTS</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SEMIMETALS</topic><topic>SILICA</topic><topic>SILICON</topic><topic>SILICON COMPOUNDS</topic><topic>SILICON OXIDES</topic><topic>SURFACE ENERGY</topic><topic>SURFACE PROPERTIES</topic><topic>THERMODYNAMIC PROPERTIES</topic><topic>TRAPS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sah, Chih-Tang</creatorcontrib><creatorcontrib>Lin, Wallace Wan-Li</creatorcontrib><creatorcontrib>Pan, Samuel Cheng-Sheng</creatorcontrib><creatorcontrib>Hsu, Charles Ching-Hsiang</creatorcontrib><creatorcontrib>Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>OSTI.GOV</collection><jtitle>Appl. Phys. Lett.; (United States)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sah, Chih-Tang</au><au>Lin, Wallace Wan-Li</au><au>Pan, Samuel Cheng-Sheng</au><au>Hsu, Charles Ching-Hsiang</au><aucorp>Solid State Electronics Laboratory, Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801</aucorp><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>New method for separating and characterizing interface states and oxide traps on oxidized silicon</atitle><jtitle>Appl. Phys. Lett.; (United States)</jtitle><date>1986-03-24</date><risdate>1986</risdate><volume>48</volume><issue>12</issue><spage>782</spage><epage>784</epage><pages>782-784</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>The generation-annealing kinetics of interface and oxide traps are separated using a new time-dependent high-frequency capacitance-voltage technique based on the independence of the trapped oxide charge density on the silicon surface energy band bending or surface potential. An application example of this new technique is described which gives the post-irradiation room-temperature annealing rates and annealed densities of the two oxide and two interface traps generated by an 8-keV electron beam.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.96720</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Appl. Phys. Lett.; (United States), 1986-03, Vol.48 (12), p.782-784 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_96720 |
| source | AIP Digital Archive |
| subjects | 360605 - Materials- Radiation Effects ANNEALING Applied sciences BEAMS CHALCOGENIDES CHEMICAL REACTIONS COLLISIONS ELECTRIC CONDUCTIVITY ELECTRICAL PROPERTIES ELECTRON BEAMS ELECTRON COLLISIONS ELECTRONIC STRUCTURE Electronics ELEMENTS ENERGY ENERGY RANGE Exact sciences and technology FREE ENERGY HEAT TREATMENTS INTERFACES KEV RANGE KEV RANGE 01-10 KINETICS LEPTON BEAMS MATERIALS SCIENCE MINERALS OXIDATION OXIDE MINERALS OXIDES OXYGEN COMPOUNDS PARTICLE BEAMS PHYSICAL PROPERTIES PHYSICAL RADIATION EFFECTS RADIATION EFFECTS Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SEMIMETALS SILICA SILICON SILICON COMPOUNDS SILICON OXIDES SURFACE ENERGY SURFACE PROPERTIES THERMODYNAMIC PROPERTIES TRAPS |
| title | New method for separating and characterizing interface states and oxide traps on oxidized silicon |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-05T14%3A26%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_osti_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=New%20method%20for%20separating%20and%20characterizing%20interface%20states%20and%20oxide%20traps%20on%20oxidized%20silicon&rft.jtitle=Appl.%20Phys.%20Lett.;%20(United%20States)&rft.au=Sah,%20Chih-Tang&rft.aucorp=Solid%20State%20Electronics%20Laboratory,%20Department%20of%20Electrical%20and%20Computer%20Engineering,%20University%20of%20Illinois%20at%20Urbana-Champaign,%20Urbana,%20Illinois%2061801&rft.date=1986-03-24&rft.volume=48&rft.issue=12&rft.spage=782&rft.epage=784&rft.pages=782-784&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.96720&rft_dat=%3Cpascalfrancis_osti_%3E7916165%3C/pascalfrancis_osti_%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |