New method for separating and characterizing interface states and oxide traps on oxidized silicon

The generation-annealing kinetics of interface and oxide traps are separated using a new time-dependent high-frequency capacitance-voltage technique based on the independence of the trapped oxide charge density on the silicon surface energy band bending or surface potential. An application example of this new technique is described which gives the post-irradiation room-temperature annealing rates and annealed densities of the two oxide and two interface traps generated by an 8-keV electron beam.