Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon

High-energy (0.2–0.8 MeV, ≊1017 cm−2) electron irradiation-stimulated solid phase regrowth of phosphorus-implanted silicon layers has been observed in the temperature range 350–600 °C. The influence of electron irradiation on the annealing of an isolated damage layer and of a continuous amorphous la...

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1986-04, Vol.48 (17), p.1132-1134
Hauptverfasser:	MIYAO, M, POLMAN, A, SINKE, W, SARIS, F. W, VAN KEMP, R
Format:	Artikel
Sprache:	eng
Schlagworte:	360602 > Other Materials-- Structure & Phase Studies AMORPHOUS STATE ANNEALING Charge carriers: generation, recombination, lifetime, and trapping COLLISIONS Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators DAMAGE ELECTRON COLLISIONS Electronic transport in condensed matter ELEMENTS Exact sciences and technology HEAT TREATMENTS HIGH TEMPERATURE ION IMPLANTATION IONIZATION MATERIALS SCIENCE PHYSICAL RADIATION EFFECTS Physics RADIATION EFFECTS SEMIMETALS 360605 > Materials-- Radiation Effects SILICON TRAPPING
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Zusammenfassung:	High-energy (0.2–0.8 MeV, ≊1017 cm−2) electron irradiation-stimulated solid phase regrowth of phosphorus-implanted silicon layers has been observed in the temperature range 350–600 °C. The influence of electron irradiation on the annealing of an isolated damage layer and of a continuous amorphous layer is compared. An ionization effect is found to enhance annealing of trapping centers in the isolated damage region. In addition, a small enhancement of solid phase epitaxial regrowth of the continuous amorphous layer was found, attributed to an elastic displacement effect.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.96447