Measurement of high boron concentrations in silicon by infrared spectroscopy

A new absorption line corresponding to an electronic transition P3/2→P1/2 at 668 cm−1 is used to measure high concentrations of boron in silicon. The calibration constant at 12 K is determined from the measurements on single-crystal silicon. A linear relationship between the absorbance and boron con...

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Veröffentlicht in:	Applied physics letters 1985-01, Vol.47 (1), p.39-41
1. Verfasser:	SOPORI, B. L
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Infrared and raman spectra and scattering Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Physics
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Zusammenfassung:	A new absorption line corresponding to an electronic transition P3/2→P1/2 at 668 cm−1 is used to measure high concentrations of boron in silicon. The calibration constant at 12 K is determined from the measurements on single-crystal silicon. A linear relationship between the absorbance and boron concentration is established up to 1017 cm−3 doping levels. Application of this measurement technique to large grain polycrystalline silicon is discussed.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.96395