Silicon diffusion at polycrystalline-Si/GaAs interfaces

Polycrystalline-Si/GaAs interfaces have been prepared by depositing hydrogenated amorphous Si (a-Si:H) onto GaAs in a silane plasma at 450 °C and annealing at temperatures between 600 and 1020 °C. Rutherford backscattering, secondary ion mass spectroscopy, and transmission electron microscopy show t...

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Veröffentlicht in:	Applied physics letters 1985-12, Vol.47 (11), p.1208-1210
Hauptverfasser:	KAVANAGH, K. L, MAYER, J. W, MAGEE, C. W, SHEETS, J, TONG, J, WOODALL, J. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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Zusammenfassung:	Polycrystalline-Si/GaAs interfaces have been prepared by depositing hydrogenated amorphous Si (a-Si:H) onto GaAs in a silane plasma at 450 °C and annealing at temperatures between 600 and 1020 °C. Rutherford backscattering, secondary ion mass spectroscopy, and transmission electron microscopy show that the resulting polycrystalline-Si/GaAs interface is metallurgically stable when the Si is undoped while significant interdiffusion occurs when 12 at. % As is added to the Si. The data are consistent with the Greiner/Gibbons theory [Appl. Phys. Lett. 44, 750 (1984)] that high concentrations of Si diffuse in GaAs in the form of Si-Si substitutional pairs via Ga and As vacancies.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.96330