Molecular beam epitaxial growth of Si on CoSi2 substrates
Thin epitaxial films of Si have been grown on single crystal CoSi2 (111) substrates by molecular beam epitaxy. The CoSi2 was found to become atomically clean and suitable for growth upon heating to ≂750 °C in ultrahigh vacuum. Film uniformity and crystalline quality as judged by reflection electron...
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| Veröffentlicht in: | Applied physics letters 1985-01, Vol.47 (11), p.1200-1202 |
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| container_issue | 11 |
| container_start_page | 1200 |
| container_title | Applied physics letters |
| container_volume | 47 |
| creator | DITCHEK, B. M SALERNO, J. P GORMLEY, J. V |
| description | Thin epitaxial films of Si have been grown on single crystal CoSi2 (111) substrates by molecular beam epitaxy. The CoSi2 was found to become atomically clean and suitable for growth upon heating to ≂750 °C in ultrahigh vacuum. Film uniformity and crystalline quality as judged by reflection electron diffraction are maximized by using growth temperatures as low as 400 °C. |
| doi_str_mv | 10.1063/1.96327 |
| format | Article |
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M</creatorcontrib><creatorcontrib>SALERNO, J. P</creatorcontrib><creatorcontrib>GORMLEY, J. V</creatorcontrib><title>Molecular beam epitaxial growth of Si on CoSi2 substrates</title><title>Applied physics letters</title><description>Thin epitaxial films of Si have been grown on single crystal CoSi2 (111) substrates by molecular beam epitaxy. The CoSi2 was found to become atomically clean and suitable for growth upon heating to ≂750 °C in ultrahigh vacuum. Film uniformity and crystalline quality as judged by reflection electron diffraction are maximized by using growth temperatures as low as 400 °C.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</subject><subject>Thin film structure and morphology</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNo9j8tKAzEYRoMoOFbxFbIQXE3N7U8ySyneoOKiuh5y1ci0GZIp6ttbrbj6-OBw4CB0TsmcEsmv6LyTnKkD1FCiVMsp1YeoIYTwVnZAj9FJre-7C4zzBnWPeQhuO5iCbTBrHMY0mc9kBvxa8sf0hnPEq4TzBi_yKjFct7ZOxUyhnqKjaIYazv52hl5ub54X9-3y6e5hcb1sHQM2tVJ5B8I6cBoccaBtR70BIYTWPtBArWGWEU-sjNYHYOAVk4GwKACcFHyGLvdeV3KtJcR-LGltyldPSf9T3NP-t3hHXuzJ0VRnhljMxqX6j2vFOg6cfwMyElPQ</recordid><startdate>19850101</startdate><enddate>19850101</enddate><creator>DITCHEK, B. M</creator><creator>SALERNO, J. P</creator><creator>GORMLEY, J. V</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19850101</creationdate><title>Molecular beam epitaxial growth of Si on CoSi2 substrates</title><author>DITCHEK, B. M ; SALERNO, J. P ; GORMLEY, J. V</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c252t-67dc54bc5c85c0c58b91da544488de1e1ba2b20d0b6fbde525d726e02f455c643</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>DITCHEK, B. M</creatorcontrib><creatorcontrib>SALERNO, J. P</creatorcontrib><creatorcontrib>GORMLEY, J. V</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>DITCHEK, B. M</au><au>SALERNO, J. P</au><au>GORMLEY, J. V</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Molecular beam epitaxial growth of Si on CoSi2 substrates</atitle><jtitle>Applied physics letters</jtitle><date>1985-01-01</date><risdate>1985</risdate><volume>47</volume><issue>11</issue><spage>1200</spage><epage>1202</epage><pages>1200-1202</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Thin epitaxial films of Si have been grown on single crystal CoSi2 (111) substrates by molecular beam epitaxy. The CoSi2 was found to become atomically clean and suitable for growth upon heating to ≂750 °C in ultrahigh vacuum. Film uniformity and crystalline quality as judged by reflection electron diffraction are maximized by using growth temperatures as low as 400 °C.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.96327</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1985-01, Vol.47 (11), p.1200-1202 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_96327 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Molecular beam epitaxial growth of Si on CoSi2 substrates |
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