Molecular beam epitaxial growth of Si on CoSi2 substrates

Thin epitaxial films of Si have been grown on single crystal CoSi2 (111) substrates by molecular beam epitaxy. The CoSi2 was found to become atomically clean and suitable for growth upon heating to ≂750 °C in ultrahigh vacuum. Film uniformity and crystalline quality as judged by reflection electron...

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Veröffentlicht in:	Applied physics letters 1985-01, Vol.47 (11), p.1200-1202
Hauptverfasser:	DITCHEK, B. M, SALERNO, J. P, GORMLEY, J. V
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	Thin epitaxial films of Si have been grown on single crystal CoSi2 (111) substrates by molecular beam epitaxy. The CoSi2 was found to become atomically clean and suitable for growth upon heating to ≂750 °C in ultrahigh vacuum. Film uniformity and crystalline quality as judged by reflection electron diffraction are maximized by using growth temperatures as low as 400 °C.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.96327