Low threshold planar buried heterostructure lasers fabricated by impurity-induced disordering

We report on the fabrication of index-guided buried heterostructure lasers by the process of silicon impurity-induced disordering. This fabrication process for a buried heterostructure laser offers the advantage of reduced fabrication complexity over previous fabrication methods. We present measurements that demonstrate the operation of these devices in a single longitudinal mode, fundamental transverse mode, and with cw threshold currents as low as 3 mA. We also have extracted 80 mW cw from a device with a 10-mA threshold current. Our results indicate that this process has great potential for the fabrication of low threshold, efficient light sources.