Oxygen content of heavily doped silicon

Oxygen content of heavily doped silicon

We have determined the oxygen content of heavily doped n- and p-type silicon using charged particle activation analysis. Specifically, when crystals are grown using the Czochralski technique and keeping growth parameters constant, the oxygen content does not vary with dopant additions for p− and n+...

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Veröffentlicht in:Applied physics letters 1985-05, Vol.46 (9), p.887-889
Hauptverfasser: PEARCE, C. W, JACCODINE, R. J, FILO, A. J, LIN, W
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: structure, mechanical and thermal properties
Defects and impurities in crystals
microstructure
Exact sciences and technology
Impurities: concentration, distribution, and gradients
Physics
Structure of solids and liquids
crystallography
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Zusammenfassung:We have determined the oxygen content of heavily doped n- and p-type silicon using charged particle activation analysis. Specifically, when crystals are grown using the Czochralski technique and keeping growth parameters constant, the oxygen content does not vary with dopant additions for p− and n+ crystals but does seem to increase for p+ crystals.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.95876