Reduced dynamic linewidth in three-terminal two-section diode lasers

The dynamic wavelength chirping observed in modulated semiconductor lasers can be reduced in three-terminal coupled-cavity structures by appropriately splitting the modulation signal to the two cavities. In a 1.3-μm wavelength GaInAsP/InP cleaved-coupled-cavity laser, the 90% modulation-depth linewi...

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1985-01, Vol.46 (2), p.125-127
Hauptverfasser:	COLDREN, L. A, BOYD, G. D, BOWERS, J. E, BURRUS, C. A
Format:	Artikel
Sprache:	eng
Schlagworte:	ARSENIC COMPOUNDS ARSENIDES ELECTROMAGNETIC RADIATION ENGINEERING Exact sciences and technology FREQUENCY MODULATION FREQUENCY RANGE Fundamental areas of phenomenology (including applications) GALLIUM ARSENIDES GALLIUM COMPOUNDS GALLIUM PHOSPHIDES GHZ RANGE GHZ RANGE 01-100 INDIUM ARSENIDES INDIUM COMPOUNDS INDIUM PHOSPHIDES INFRARED RADIATION LASER CAVITIES LASERS MODULATION Optics PHOSPHIDES PHOSPHORUS COMPOUNDS Physics PNICTIDES RADIATIONS SEMICONDUCTOR DEVICES 420300 > Engineering-- Lasers-- (-1989) SEMICONDUCTOR LASERS Semiconductor lasers laser diodes
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Beschreibung
Zusammenfassung:	The dynamic wavelength chirping observed in modulated semiconductor lasers can be reduced in three-terminal coupled-cavity structures by appropriately splitting the modulation signal to the two cavities. In a 1.3-μm wavelength GaInAsP/InP cleaved-coupled-cavity laser, the 90% modulation-depth linewidth was reduced to ∼0.2 Å for modulation frequencies up to 1.7 GHz.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.95708