GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy
Double heterostructure and separate confinement heterostructure lasers of GaxIn1−xAs1−yPy lattice matched to InP and emitting at 1.5 μm have been grown by molecular beam epitaxy utilizing the decomposition of AsH3 and PH3 as a source of As2 and P2 molecules. Broad area lasers fabricated from the gas...
Gespeichert in:
| Veröffentlicht in: | Applied physics letters 1984-01, Vol.44 (8), p.785-787 |
|---|---|
| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 787 |
|---|---|
| container_issue | 8 |
| container_start_page | 785 |
| container_title | Applied physics letters |
| container_volume | 44 |
| creator | PANISH, M. B TEMKIN, H |
| description | Double heterostructure and separate confinement heterostructure lasers of GaxIn1−xAs1−yPy lattice matched to InP and emitting at 1.5 μm have been grown by molecular beam epitaxy utilizing the decomposition of AsH3 and PH3 as a source of As2 and P2 molecules. Broad area lasers fabricated from the gas source molecular beam epitaxy (MBE) wafers had pulsed room-temperature threshold current densities (≊2000 A/cm2) and differential quantum efficiencies (17%–19%) that are comparable to state of the art 1.5-μm broad area lasers grown by other methods. The gas source MBE method appears to yield highly uniform material. |
| doi_str_mv | 10.1063/1.94918 |
| format | Article |
| fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_94918</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>9702688</sourcerecordid><originalsourceid>FETCH-LOGICAL-c252t-ed0112777646e51f063a8fd7a390a2d1f707c984cdffd64a51746635cca5fe443</originalsourceid><addsrcrecordid>eNo9kM1KAzEUhYMoWKv4ClkIrqbmTibJzLIUrYWCXeh6uM3c1JH5KUkG7bv5DD6ToxVXhwMfB77D2DWIGQgt72BWZAXkJ2wCwphEAuSnbCKEkIkuFJyzixDexqpSKSeMlrjq5mFzt-o2_JUi-T5EP9g4eOINBvKBU1vHWHc7jpHDTPGvz5ZjV_Gd7987vj3wHQYe-sFb4m3fkB0a9HxL2HLa1xE_DpfszGET6Oovp-zl4f558Zisn5arxXyd2FSlMaFKAKTGGJ1pUuBGHcxdZVAWAtMKnBHGFnlmK-cqnaECk2ktlbWoHGWZnLLb464dNYInV-593aI_lCDKn3dKKH_fGcmbI7nHYLFxHjtbh3-8MCLVeS6_AcBVZBg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy</title><source>AIP Digital Archive</source><creator>PANISH, M. B ; TEMKIN, H</creator><creatorcontrib>PANISH, M. B ; TEMKIN, H</creatorcontrib><description>Double heterostructure and separate confinement heterostructure lasers of GaxIn1−xAs1−yPy lattice matched to InP and emitting at 1.5 μm have been grown by molecular beam epitaxy utilizing the decomposition of AsH3 and PH3 as a source of As2 and P2 molecules. Broad area lasers fabricated from the gas source molecular beam epitaxy (MBE) wafers had pulsed room-temperature threshold current densities (≊2000 A/cm2) and differential quantum efficiencies (17%–19%) that are comparable to state of the art 1.5-μm broad area lasers grown by other methods. The gas source MBE method appears to yield highly uniform material.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.94918</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville, NY: American Institute of Physics</publisher><subject>Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Lasers ; Optics ; Physics ; Semiconductor lasers; laser diodes</subject><ispartof>Applied physics letters, 1984-01, Vol.44 (8), p.785-787</ispartof><rights>1984 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c252t-ed0112777646e51f063a8fd7a390a2d1f707c984cdffd64a51746635cca5fe443</citedby><cites>FETCH-LOGICAL-c252t-ed0112777646e51f063a8fd7a390a2d1f707c984cdffd64a51746635cca5fe443</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=9702688$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>PANISH, M. B</creatorcontrib><creatorcontrib>TEMKIN, H</creatorcontrib><title>GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy</title><title>Applied physics letters</title><description>Double heterostructure and separate confinement heterostructure lasers of GaxIn1−xAs1−yPy lattice matched to InP and emitting at 1.5 μm have been grown by molecular beam epitaxy utilizing the decomposition of AsH3 and PH3 as a source of As2 and P2 molecules. Broad area lasers fabricated from the gas source molecular beam epitaxy (MBE) wafers had pulsed room-temperature threshold current densities (≊2000 A/cm2) and differential quantum efficiencies (17%–19%) that are comparable to state of the art 1.5-μm broad area lasers grown by other methods. The gas source MBE method appears to yield highly uniform material.</description><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Lasers</subject><subject>Optics</subject><subject>Physics</subject><subject>Semiconductor lasers; laser diodes</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1984</creationdate><recordtype>article</recordtype><recordid>eNo9kM1KAzEUhYMoWKv4ClkIrqbmTibJzLIUrYWCXeh6uM3c1JH5KUkG7bv5DD6ToxVXhwMfB77D2DWIGQgt72BWZAXkJ2wCwphEAuSnbCKEkIkuFJyzixDexqpSKSeMlrjq5mFzt-o2_JUi-T5EP9g4eOINBvKBU1vHWHc7jpHDTPGvz5ZjV_Gd7987vj3wHQYe-sFb4m3fkB0a9HxL2HLa1xE_DpfszGET6Oovp-zl4f558Zisn5arxXyd2FSlMaFKAKTGGJ1pUuBGHcxdZVAWAtMKnBHGFnlmK-cqnaECk2ktlbWoHGWZnLLb464dNYInV-593aI_lCDKn3dKKH_fGcmbI7nHYLFxHjtbh3-8MCLVeS6_AcBVZBg</recordid><startdate>19840101</startdate><enddate>19840101</enddate><creator>PANISH, M. B</creator><creator>TEMKIN, H</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19840101</creationdate><title>GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy</title><author>PANISH, M. B ; TEMKIN, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c252t-ed0112777646e51f063a8fd7a390a2d1f707c984cdffd64a51746635cca5fe443</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1984</creationdate><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Lasers</topic><topic>Optics</topic><topic>Physics</topic><topic>Semiconductor lasers; laser diodes</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>PANISH, M. B</creatorcontrib><creatorcontrib>TEMKIN, H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>PANISH, M. B</au><au>TEMKIN, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy</atitle><jtitle>Applied physics letters</jtitle><date>1984-01-01</date><risdate>1984</risdate><volume>44</volume><issue>8</issue><spage>785</spage><epage>787</epage><pages>785-787</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Double heterostructure and separate confinement heterostructure lasers of GaxIn1−xAs1−yPy lattice matched to InP and emitting at 1.5 μm have been grown by molecular beam epitaxy utilizing the decomposition of AsH3 and PH3 as a source of As2 and P2 molecules. Broad area lasers fabricated from the gas source molecular beam epitaxy (MBE) wafers had pulsed room-temperature threshold current densities (≊2000 A/cm2) and differential quantum efficiencies (17%–19%) that are comparable to state of the art 1.5-μm broad area lasers grown by other methods. The gas source MBE method appears to yield highly uniform material.</abstract><cop>Melville, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.94918</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 1984-01, Vol.44 (8), p.785-787 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_94918 |
| source | AIP Digital Archive |
| subjects | Exact sciences and technology Fundamental areas of phenomenology (including applications) Lasers Optics Physics Semiconductor lasers laser diodes |
| title | GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T09%3A03%3A11IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=GaInAsP/InP%20heterostructure%20lasers%20emitting%20at%201.5%20%CE%BCm%20and%20grown%20by%20gas%20source%20molecular%20beam%20epitaxy&rft.jtitle=Applied%20physics%20letters&rft.au=PANISH,%20M.%20B&rft.date=1984-01-01&rft.volume=44&rft.issue=8&rft.spage=785&rft.epage=787&rft.pages=785-787&rft.issn=0003-6951&rft.eissn=1077-3118&rft.coden=APPLAB&rft_id=info:doi/10.1063/1.94918&rft_dat=%3Cpascalfrancis_cross%3E9702688%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |