GaInAsP/InP heterostructure lasers emitting at 1.5 μm and grown by gas source molecular beam epitaxy

Double heterostructure and separate confinement heterostructure lasers of GaxIn1−xAs1−yPy lattice matched to InP and emitting at 1.5 μm have been grown by molecular beam epitaxy utilizing the decomposition of AsH3 and PH3 as a source of As2 and P2 molecules. Broad area lasers fabricated from the gas source molecular beam epitaxy (MBE) wafers had pulsed room-temperature threshold current densities (≊2000 A/cm2) and differential quantum efficiencies (17%–19%) that are comparable to state of the art 1.5-μm broad area lasers grown by other methods. The gas source MBE method appears to yield highly uniform material.