Hole burning spectroscopy of R' aggregate color centers in polycrystalline LiF thin films using a GaAlAs diode laser

Hole burning spectroscopy of R' aggregate color centers in polycrystalline LiF thin films using a GaAlAs diode laser

The first spectroscopic measurements of R′ aggregate color centers contained in polycrystalline LiF hosts are reported. The inhomogeneous and homogeneous widths of the 830-nm zero phonon line are measured by conventional grating spectroscopy and by photochemical hole burning spectroscopy using a cur...

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Veröffentlicht in:Applied physics letters 1983-01, Vol.43 (12), p.1102-1104
Hauptverfasser: ORTIZ, C, AFONSO, N, POKROWSKY, P, BJORKLUND, G. C
Format: Artikel
Sprache:eng
Schlagworte:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physical properties of thin films, nonelectronic
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Zusammenfassung:The first spectroscopic measurements of R′ aggregate color centers contained in polycrystalline LiF hosts are reported. The inhomogeneous and homogeneous widths of the 830-nm zero phonon line are measured by conventional grating spectroscopy and by photochemical hole burning spectroscopy using a current tuned GaAlAs diode laser with 3-mW output power. An extensive photochemical hole burning comparison between single and polycrystalline samples is presented.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.94241