Propagation loss of the acoustic pseudosurface wave on (ZXt) 45° GaAs

Measurements of propagation loss for the leaky surface acoustic wave on (100)-cut GaAs with 〈110〉 propagation direction are reported. The measurements were made in the frequency range 200–900 MHz. The propagation loss was determined with a novel technique using a delay line with four interdigital transducers. The effect of a hydrogen implant of dose 1014 cm−2 and energy 120 keV (technique for producing high resistivity isolation regions in GaAs) on propagation loss and macroscopic piezoelecticity are reported.