Interfacial properties of indium tin oxide/indium phosphide devices

Interfacial properties of indium tin oxide/indium phosphide devices

Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated by ion beam deposition. In this letter, a critical evaluation of the ITO/InP interface is presented using complementary capacitance-voltage and ion microprobe measurements. We have found that deposition of ITO produces a semi-in...

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Veröffentlicht in:Appl. Phys. Lett.; (United States) 1982-10, Vol.41 (8), p.727-729
Hauptverfasser: Sheldon, P., Ahrenkiel, R. K., Hayes, R. E., Russell, P. E.
Format: Artikel
Sprache:eng
Schlagworte:
BEAMS
CHALCOGENIDES
CHEMICAL ANALYSIS
DEPOSITION
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
FABRICATION
IMPURITIES
INDIUM COMPOUNDS
INDIUM OXIDES
INDIUM PHOSPHIDE SOLAR CELLS
INTERFACES
ION BEAMS
ION MICROPROBE ANALYSIS
LAYERS
MICROANALYSIS
NONDESTRUCTIVE ANALYSIS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SOLAR CELLS
SOLAR ENERGY
SOLAR EQUIPMENT
THICKNESS
TIN COMPOUNDS 140501 > Solar Energy Conversion-- Photovoltaic Conversion
TIN OXIDES
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Beschreibung
Zusammenfassung:Efficient indium tin oxide (ITO)/p-InP solar cells have been fabricated by ion beam deposition. In this letter, a critical evaluation of the ITO/InP interface is presented using complementary capacitance-voltage and ion microprobe measurements. We have found that deposition of ITO produces a semi-insulating region at the InP surface. This high resistivity layer extends about 750 Å into the bulk. We have evidence that this region is due to surface accumulation of compensating impurities.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.93656