Electrical properties of laser chemically doped silicon

Electrical properties of laser chemically doped silicon

The electrical properties of single-crystal and amorphous Si, doped using a pulsed UV laser, have been studied as a function of laser wavelength and fluence and of UV dose. BCl3 or PCl3 parent gases were used to provide B or P dopant atoms. Dissociation of molecules adsorbed on the Si surface can su...

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Veröffentlicht in:Applied physics letters 1981-11, Vol.39 (10), p.825-827
Hauptverfasser: Deutsch, T. F., Ehrlich, D. J., Rathman, D. D., Silversmith, D. J., Osgood, R. M.
Format: Artikel
Sprache:eng
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Zusammenfassung:The electrical properties of single-crystal and amorphous Si, doped using a pulsed UV laser, have been studied as a function of laser wavelength and fluence and of UV dose. BCl3 or PCl3 parent gases were used to provide B or P dopant atoms. Dissociation of molecules adsorbed on the Si surface can supplement photolysis of gas-phase molecules as a source of doping atoms.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.92572