Raman scattering study of the thermal oxidation of InP

Reflection Raman scattering has been used to study thermally grown air-oxidized films on InP. Elemental red phosphorus is detected in films grown between 350 and 550 °C. At oxidation temperatures exceeding 550 °C, InPO4 is observed with some In2O3 also present as a minor film constituent.

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Bibliographische Detailangaben
Veröffentlicht in:	Applied physics letters 1980-11, Vol.37 (10), p.925-927
Hauptverfasser:	Schwartz, G. P., Sunder, W. A., Griffiths, J. E.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Reflection Raman scattering has been used to study thermally grown air-oxidized films on InP. Elemental red phosphorus is detected in films grown between 350 and 550 °C. At oxidation temperatures exceeding 550 °C, InPO4 is observed with some In2O3 also present as a minor film constituent.
ISSN:	0003-6951 1077-3118
DOI:	10.1063/1.91861