Transmission electron microscope observation of dark-spot defects in InGaAsP/InP double-heterostructure light-emitting diodes aged at high temperature

Transmission electron microscope observation of dark-spot defects in InGaAsP/InP double-heterostructure light-emitting diodes aged at high temperature

Dark-spot defects revealed in the electroluminescence patterns of degraded InGaAsP/InP double-heterostructure light-emitting diodes that are operated at the current density of 8.0 kA/cm2 at 200 °C were investigated using transmission electron microscopy. Bar-shaped defects lying in the direction of...

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Veröffentlicht in:Applied physics letters 1980-02, Vol.36 (4), p.300-301
Hauptverfasser: Ueda, Osamu, Yamakoshi, Shigenobu, Komiya, Satoshi, Akita, Kenzo, Yamaoka, Toyoshi
Format: Artikel
Sprache:eng
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Zusammenfassung:Dark-spot defects revealed in the electroluminescence patterns of degraded InGaAsP/InP double-heterostructure light-emitting diodes that are operated at the current density of 8.0 kA/cm2 at 200 °C were investigated using transmission electron microscopy. Bar-shaped defects lying in the direction of 〈100〉 or 〈110〉 were observed corresponding to the dark defects. These defects were precipitates of a certain kind of metal or compound and not ’’dislocationlike’’ ones.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.91469