Dynamics of CO2 laser heating in the processing of silicon
The optical transmission of commerical Si wafers was measured at the wavelength of 10.6 μm as a function of temperature in the interval from about 78 to 850 K. We show that the absorptivity of Si increases with the sample temperature. This temperature dependence is explained by free-carrier absorpti...
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| Veröffentlicht in: | Applied physics letters 1980-01, Vol.36 (10), p.787-788 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | The optical transmission of commerical Si wafers was measured at the wavelength of 10.6 μm as a function of temperature in the interval from about 78 to 850 K. We show that the absorptivity of Si increases with the sample temperature. This temperature dependence is explained by free-carrier absorption. A transmission measurement at 10.6 μm wavelength has been used to monitor the temperature of a Si sample as a function of time during cw laser heating. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.91334 |