Dry development of Se-Ge inorganic photoresist

Striking rate differences in gaseous plasma etching is found between undoped and Ag-photodoped Se-Ge inorganic photoresist. After the Ag photodoping, the plasma etch rate almost disappears and the etch rate ratio reaches 370:1. This leads to the ’’dry development’’ of the Se-Ge inorganic resists. It is shown that by using the plasma etching technique, fine pattern delineation of less than 1-μm linewidth is easily possible. Several advantages over wet chemical processing are expected in process simplification and reproducibility.