Replication of 175-Å lines and spaces in polymethylmethacrylate using x-ray lithography
A new technique for fabricating high contrast x-ray masks with simple patterns of lines and spaces less than 50 Å in width is described. The successful replication of 175-A lines and spaces in polymethylmethacrylate (PMMA) using the carbon K (45-Å) x-ray is reported. It was found that PMMA structure...
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| Veröffentlicht in: | Applied physics letters 1980-01, Vol.36 (1), p.93-96 |
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| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A new technique for fabricating high contrast x-ray masks with simple patterns of lines and spaces less than 50 Å in width is described. The successful replication of 175-A lines and spaces in polymethylmethacrylate (PMMA) using the carbon K (45-Å) x-ray is reported. It was found that PMMA structures smaller than 150 Å in width lost their physical integrity and would not adhere to SiO2 substrates. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.91287 |