Electron-electron effects in the writing and erasing of dual-dielectric charge-storage cells

Electron-electron effects in the writing and erasing of dual-dielectric charge-storage cells

We have found an abrupt drop in the capture efficiency of dopant-induced interfacial states in DDC’s when the stored-charge density exceeds 7×1012/cm2. The constancy of this number with electric field strength and with increasing capture efficiency from increased induced-state density suggests Coulo...

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Veröffentlicht in:Applied physics letters 1978-01, Vol.32 (3), p.131-133
Hauptverfasser: Thornber, K. K., Kahng, D.
Format: Artikel
Sprache:eng
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Zusammenfassung:We have found an abrupt drop in the capture efficiency of dopant-induced interfacial states in DDC’s when the stored-charge density exceeds 7×1012/cm2. The constancy of this number with electric field strength and with increasing capture efficiency from increased induced-state density suggests Coulombic repulsion ultimately limits writing efficiency. Erasing characteristics are also explained by barrier lowering due to electron-electron repulsion.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.89972