Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15–1.31-μm spectral region

Liquid-phase epitaxial growth of lattice-matched InGaAsP on (100)-InP for the 1.15–1.31-μm spectral region

The distribution coefficients for the growth of lattice-matched InGaAsP on (100) -InP substrates in the 1.15–1.31-μm spectral range have been determined. These results have been used in the growth of heterojunction photodiodes with quantum efficiencies ⩾48% at 1.27 μm.

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Veröffentlicht in:Applied physics letters 1978-01, Vol.32 (11), p.758-761
Hauptverfasser: Feng, M., Windhorn, T. H., Tashima, M. M., Stillman, G. E.
Format: Artikel
Sprache:eng
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Zusammenfassung:The distribution coefficients for the growth of lattice-matched InGaAsP on (100) -InP substrates in the 1.15–1.31-μm spectral range have been determined. These results have been used in the growth of heterojunction photodiodes with quantum efficiencies ⩾48% at 1.27 μm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.89920