Analytic approximations for the Fermi energy of an ideal Fermi gas

An important function in semiconductor-device analysis and transport theory is the widely tabulated Fermi-Dirac integral, ℱ (η) =2π−1/2ℱ∞0[exp(x−η)+1]−1f dx, f=x1/2, which relates, for example, the Fermi energy ηkT to the carrier density N=ℱN0 in a parabolic semiconductor band (N0=effective density...

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Veröffentlicht in:	Appl. Phys. Lett.; (United States) 1977-09, Vol.31 (5), p.354-356
Hauptverfasser:	Joyce, W. B., Dixon, R. W.
Format:	Artikel
Sprache:	eng
Schlagworte:	ANALYTICAL SOLUTION BAND THEORY BOLTZMANN STATISTICS CARRIER DENSITY ELECTRONIC STRUCTURE ENERGY LEVELS ENGINEERING FERMI GAS FERMI LEVEL LASERS SEMICONDUCTOR DEVICES 420300 > Engineering-- Lasers-- (-1989) SEMICONDUCTOR LASERS SERIES EXPANSION TRANSPORT THEORY
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