Diffused junction photovoltaic infrared detectors using Pb1− x Ge x Te with 0.05⩽ x ⩽0.11
Photovoltaic infrared detectors were fabricated in p-type Pb1−xGexTe with 0.05?x?0.11 using antimony impurity diffusion to form n-p junctions. Measurements were performed between 77 and 195 K and the long-wavelength response cutoffs varied from 3.5 to 4.5 μm. The temperature coefficient of the band...
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| Veröffentlicht in: | Applied physics letters 1975-05, Vol.26 (10), p.576-577 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Photovoltaic infrared detectors were fabricated in p-type Pb1−xGexTe with 0.05?x?0.11 using antimony impurity diffusion to form n-p junctions. Measurements were performed between 77 and 195 K and the long-wavelength response cutoffs varied from 3.5 to 4.5 μm. The temperature coefficient of the band gap changed from positive below the ferroelectric Curie temperature to negative above this temperature. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.87981 |