Study of vertical hole transport in InAs/InAsSb type-II superlattices by steady-state and time-resolved photoluminescence spectroscopy
It is known that the vertical hole mobility in superlattice structures, such as InAs/InAs1−xSbx type-II superlattices, is low and limits their photodetector performance. This paper reports the determination of vertical hole mobility in these superlattices with bandgaps in the mid-wave infrared range...
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Veröffentlicht in: | Applied physics letters 2020-05, Vol.116 (20) |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | It is known that the vertical hole mobility in superlattice structures, such as InAs/InAs1−xSbx type-II superlattices, is low and limits their photodetector performance. This paper reports the determination of vertical hole mobility in these superlattices with bandgaps in the mid-wave infrared range by using two methods based on steady-state and time-resolved photoluminescence measurements at 12 K–210 K. An ambipolar diffusion model is adopted to extract the hole mobility. The results show that the hole mobility first increases from 0.2 cm2/V s at 12 K and then levels off at ∼50 cm2/V s as the temperature exceeds ∼60 K. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.5144888 |