Systematic investigation of the growth kinetics of β-Ga2O3 epilayer by plasma enhanced chemical vapor deposition

β-Ga2O3 has attracted much attention due to its ultrawide-bandgap (∼4.9 eV) with a high breakdown field (8 MV/cm) and good thermal/chemical stability. In order for β-Ga2O3 to be used in electronic and optoelectronic devices, epitaxial growth technology of thin films should be given priority. However...

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Veröffentlicht in:Applied physics letters 2020-02, Vol.116 (7)
Hauptverfasser: Wu, C., Guo, D. Y., Zhang, L. Y., Li, P. G., Zhang, F. B., Tan, C. K., Wang, S. L., Liu, A. P., Wu, F. M., Tang, W. H.
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Sprache:eng
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Zusammenfassung:β-Ga2O3 has attracted much attention due to its ultrawide-bandgap (∼4.9 eV) with a high breakdown field (8 MV/cm) and good thermal/chemical stability. In order for β-Ga2O3 to be used in electronic and optoelectronic devices, epitaxial growth technology of thin films should be given priority. However, challenges are associated with the trade-off growth rate with crystallization and surface roughness in conventional epitaxy. Herein, plasma enhanced chemical vapor deposition was used to grow the β-Ga2O3 epilayer, and the growth kinetics process has been systematically investigated. A high growth rate of ∼0.58 μm/h and a single 2 ¯ 01 plane orientation with a full width at half maximum value of 0.86° were obtained when grown on the c-plane sapphire substrate at the growth temperature of 820 °C. Then, a proposed model for the mechanism of nucleation and growth of β-Ga2O3 epitaxial films is established to understand the precursor transport and gas phase reaction process. This work provides a cheap, green, and efficient epitaxial growth method, which is indispensable for device applications of β-Ga2O3.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5142196