Optical constants and band gap of wurtzite Al1−xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41

Optical constants and band gap of wurtzite Al1−xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41

Wurtzite Al1−xScxN thin films with scandium Sc concentrations up to x = 0.41 were prepared by reactive pulsed DC magnetron co-sputtering at heater temperatures between 300 °C and 400 °C on Al2O3 substrates. Spectroscopic ellipsometry was used to determine the dielectric functions of wurtzite Al1−xSc...

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Veröffentlicht in:Journal of applied physics 2019-07, Vol.126 (4)
Hauptverfasser: Baeumler, Martina, Lu, Yuan, Kurz, Nicolas, Kirste, Lutz, Prescher, Mario, Christoph, Tim, Wagner, Joachim, Žukauskaitė, Agnė, Ambacher, Oliver
Format: Artikel
Sprache:eng
Schlagworte:
Absorption
Aluminum oxide
Applied physics
Crystallites
Dependence
Energy gap
Parametric amplifiers
Scandium
Spectroellipsometry
Spectrum analysis
Substrates
Thin films
Wurtzite
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Zusammenfassung:Wurtzite Al1−xScxN thin films with scandium Sc concentrations up to x = 0.41 were prepared by reactive pulsed DC magnetron co-sputtering at heater temperatures between 300 °C and 400 °C on Al2O3 substrates. Spectroscopic ellipsometry was used to determine the dielectric functions of wurtzite Al1−xScxN by modeling the spectra with a three-layer model involving parametric oscillator functions for the Al1−xScxN layers. By combining ellipsometry with transmission spectroscopy, we determined the composition dependence of the optical band gap Eg. For x 
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5101043