Concentration maxima of the mobility of 2 D electrons scattered by correlated impurity ions in thin doped layers

The concentration dependences of the mobility of 2D-electrons upon scattering by an equilibrium correlated distribution of impurity ions at fixed temperatures are theoretically studied in the example of the AlxGa1–xAs/GaAs heterostructure. It is shown that, in the case of significant correlations in the arrangement of impurity ions, the presence of the effect of “electron conduction inversion” leads to local maxima of the electron mobility.