Organic transistor nonvolatile memory with an integrated molecular floating-gate/tunneling layer
Floating-gate based organic field-effect transistor (FG-OFET) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular floating-gate/tunneling layer, in which small molecular fullerene (C60) acting as the floating-gate and long-chain alkane molecule tetratetracontane acting as t...
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| Veröffentlicht in: | Applied physics letters 2018-12, Vol.113 (24) |
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| container_title | Applied physics letters |
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| creator | Xu, Ting Guo, Shuxu Xu, Meili Li, Shizhang Xie, Wenfa Wang, Wei |
| description | Floating-gate based organic field-effect transistor (FG-OFET) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular floating-gate/tunneling layer, in which small molecular fullerene (C60) acting as the floating-gate and long-chain alkane molecule tetratetracontane acting as the tunneling layer are synchronously prepared by vacuum thermal evaporation. The effects of the thickness and the component of the integrated floating-gate/tunneling layer on the performances of memory are investigated. As a result, a high performance FG-OFET NVM is achieved, with a large memory window of 8.0 V on average, stable retention capability over 10 years, and reliable switching endurance over 100 cycles at the programming/erasing voltages of ±40 V, at an optimized condition. |
| doi_str_mv | 10.1063/1.5064837 |
| format | Article |
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The effects of the thickness and the component of the integrated floating-gate/tunneling layer on the performances of memory are investigated. As a result, a high performance FG-OFET NVM is achieved, with a large memory window of 8.0 V on average, stable retention capability over 10 years, and reliable switching endurance over 100 cycles at the programming/erasing voltages of ±40 V, at an optimized condition.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.5064837</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Alkanes ; Applied physics ; Buckminsterfullerene ; Endurance ; Field effect transistors ; Fullerenes ; Semiconductor devices ; Transistors ; Vacuum thermal evaporation</subject><ispartof>Applied physics letters, 2018-12, Vol.113 (24)</ispartof><rights>Author(s)</rights><rights>2018 Author(s). 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The effects of the thickness and the component of the integrated floating-gate/tunneling layer on the performances of memory are investigated. 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The effects of the thickness and the component of the integrated floating-gate/tunneling layer on the performances of memory are investigated. As a result, a high performance FG-OFET NVM is achieved, with a large memory window of 8.0 V on average, stable retention capability over 10 years, and reliable switching endurance over 100 cycles at the programming/erasing voltages of ±40 V, at an optimized condition.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/1.5064837</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-4441-8914</orcidid></addata></record> |
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| ispartof | Applied physics letters, 2018-12, Vol.113 (24) |
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| source | AIP Journals Complete; Alma/SFX Local Collection |
| subjects | Alkanes Applied physics Buckminsterfullerene Endurance Field effect transistors Fullerenes Semiconductor devices Transistors Vacuum thermal evaporation |
| title | Organic transistor nonvolatile memory with an integrated molecular floating-gate/tunneling layer |
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