Organic transistor nonvolatile memory with an integrated molecular floating-gate/tunneling layer
Floating-gate based organic field-effect transistor (FG-OFET) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular floating-gate/tunneling layer, in which small molecular fullerene (C60) acting as the floating-gate and long-chain alkane molecule tetratetracontane acting as t...
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Veröffentlicht in: | Applied physics letters 2018-12, Vol.113 (24) |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Floating-gate based organic field-effect transistor (FG-OFET) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular floating-gate/tunneling layer, in which small molecular fullerene (C60) acting as the floating-gate and long-chain alkane molecule tetratetracontane acting as the tunneling layer are synchronously prepared by vacuum thermal evaporation. The effects of the thickness and the component of the integrated floating-gate/tunneling layer on the performances of memory are investigated. As a result, a high performance FG-OFET NVM is achieved, with a large memory window of 8.0 V on average, stable retention capability over 10 years, and reliable switching endurance over 100 cycles at the programming/erasing voltages of ±40 V, at an optimized condition. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.5064837 |