Organic transistor nonvolatile memory with an integrated molecular floating-gate/tunneling layer

Floating-gate based organic field-effect transistor (FG-OFET) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular floating-gate/tunneling layer, in which small molecular fullerene (C60) acting as the floating-gate and long-chain alkane molecule tetratetracontane acting as t...

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Veröffentlicht in:Applied physics letters 2018-12, Vol.113 (24)
Hauptverfasser: Xu, Ting, Guo, Shuxu, Xu, Meili, Li, Shizhang, Xie, Wenfa, Wang, Wei
Format: Artikel
Sprache:eng
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Zusammenfassung:Floating-gate based organic field-effect transistor (FG-OFET) nonvolatile memories (NVMs) are demonstrated based on an integrated molecular floating-gate/tunneling layer, in which small molecular fullerene (C60) acting as the floating-gate and long-chain alkane molecule tetratetracontane acting as the tunneling layer are synchronously prepared by vacuum thermal evaporation. The effects of the thickness and the component of the integrated floating-gate/tunneling layer on the performances of memory are investigated. As a result, a high performance FG-OFET NVM is achieved, with a large memory window of 8.0 V on average, stable retention capability over 10 years, and reliable switching endurance over 100 cycles at the programming/erasing voltages of ±40 V, at an optimized condition.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5064837