Switching domain wall motion on and off using a gate voltage for domain wall transistor applications

Spintronic devices such as magnetic random access memory and domain wall (DW) memory are attracting significant attention. Spin-field effect transistor devices have been proposed and researched for logic applications. In domain wall memory, the information is stored in magnetic domain states, which...

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Veröffentlicht in:Applied physics letters 2018-12, Vol.113 (23)
Hauptverfasser: Ma, Chuang, Jin, Tianli, Liu, Xiaoxi, Piramanayagam, S. N.
Format: Artikel
Sprache:eng
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Zusammenfassung:Spintronic devices such as magnetic random access memory and domain wall (DW) memory are attracting significant attention. Spin-field effect transistor devices have been proposed and researched for logic applications. In domain wall memory, the information is stored in magnetic domain states, which can be moved with a current above a certain threshold value. So far, the domain wall motion is only determined by the current density for most of the DW devices. Here, we demonstrate experimentally that a significant change in domain wall mobility can be achieved by applying a gate voltage. By applying a positive gate voltage, we show that the threshold current density for DW motion can be reduced by more than 10%. By choosing a suitable operating current, the domain wall motion can be switched on or off by the use of a gate voltage. These results are promising for designing high performance domain wall based transistor devices with faster operation speed and lower power consumption.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5053852